18470972. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yun Ki Lee of Hwaseong-si (KR)

Jung-Saeng Kim of Seoul (KR)

Hyungeun Yoo of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18470972 titled 'IMAGE SENSOR

Simplified Explanation

The abstract describes an image sensor that consists of a semiconductor layer with two sections, each having a surface facing each other. The semiconductor layer also includes a device isolation layer that defines multiple pixels. On the first surface of the semiconductor layer, there is a first grid pattern over the first section and a light-shield pattern over the second section. The top surface of the first grid pattern is at a lower level than the top surface of the light-shield pattern, and these levels are defined with respect to the first surface of the semiconductor layer.

  • The patent application describes an image sensor design with a semiconductor layer divided into two sections.
  • The device isolation layer within the semiconductor layer defines multiple pixels.
  • A first grid pattern is present on the first section of the semiconductor layer's surface.
  • A light-shield pattern is present on the second section of the semiconductor layer's surface.
  • The top surface of the first grid pattern is at a lower level than the top surface of the light-shield pattern.

Potential Applications:

  • This image sensor technology can be used in digital cameras, smartphones, and other devices that require high-quality image capture.
  • It can be applied in surveillance systems, medical imaging devices, and automotive cameras.

Problems Solved:

  • The device isolation layer helps in preventing cross-talk between pixels, ensuring accurate image capture.
  • The first grid pattern and light-shield pattern enhance the image quality by reducing unwanted light interference.

Benefits:

  • Improved image quality and accuracy due to the device isolation layer and light-shield pattern.
  • The design allows for better control of light capture and reduces noise in the captured images.
  • The technology can lead to smaller and more efficient image sensors, enabling thinner devices and better integration into various products.


Original Abstract Submitted

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.