18470669. SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
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SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Sagarika Mukesh of Albany NY US
Alexander Reznicek of Troy NY US
Ruilong Xie of Niskayuna NY US
SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES
This abstract first appeared for US patent application 18470669 titled 'SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES
Original Abstract Submitted
A semiconductor device comprises a stacked structure, the stacked structure comprising a plurality of gate structures alternately stacked with a plurality of channel layers. At least one epitaxial source/drain region disposed on a side of the stacked structure, and the stacked structure is disposed on at least one dielectric layer. A portion of the at least one epitaxial source/drain region is disposed in the at least one dielectric layer.
