18470537. SEMICONDUCTOR MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18470537 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor device described in the patent application includes a substrate with an active pattern, a bit line structure crossing the active pattern, a storage node contact connected to the active pattern near the bit line structure, a spacer structure between the bit line structure and the storage node contact, an insulating pattern on the spacer structure, and a landing pad structure connected to the storage node contact.
- The spacer structure is positioned such that its upper surface is at a lower vertical level than the upper surface of the bit line structure.
- The landing pad structure has three side surfaces: one in contact with the spacer structure, one in contact with the bit line structure, and one in contact with the insulating pattern.
- The landing pad structure serves as an electrical connection point for the storage node contact, spacer structure, and bit line structure.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient electrical connections in semiconductor devices - Space-saving design for complex circuitry
Benefits: - Improved performance of semiconductor devices - Enhanced reliability of electrical connections - Compact design for high-density integrated circuits
Commercial Applications: Title: Advanced Semiconductor Devices for Memory Applications This technology can be utilized in the production of memory chips, microprocessors, and other electronic components. The compact design and efficient electrical connections make it ideal for high-performance computing applications.
Questions about the technology: 1. How does the spacer structure contribute to the overall functionality of the semiconductor device?
The spacer structure helps maintain the proper alignment and spacing between the bit line structure and the storage node contact, ensuring reliable electrical connections.
2. What advantages does the landing pad structure offer in terms of circuit design and performance?
The landing pad structure provides a convenient and secure connection point for various components, streamlining the manufacturing process and improving overall device performance.
Original Abstract Submitted
A semiconductor device includes a substrate that includes an active pattern, a bit line structure that crosses the active pattern, a storage node contact electrically connected to the active pattern next to the bit line structure, a spacer structure between a side surface of the bit line structure and the storage node contact, an upper surface of the spacer structure is at a vertical level lower than an upper surface of the bit line structure, an insulating pattern on the spacer structure, and a landing pad structure electrically connected to the storage node contact and on the spacer structure and the bit line structure. The landing pad structure include a first side surface in contact with the spacer structure, a second side surface in contact with the bit line structure, and a third side surface in contact with the insulating pattern.
