18468773. SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SACHIO Kodama of Kariya-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18468773 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor element with two main electrodes, along with wiring members and a conductive spacer.
- The semiconductor element has a first main electrode and a second main electrode.
- A first wiring member is connected to the first main electrode, and a second wiring member is connected to the second main electrode.
- A conductive spacer is placed between the semiconductor element and the first wiring member.
- The conductive spacer has an end surface facing the semiconductor element and a side surface with a recess adjacent to a pad in a plan view.
- The side surface of the conductive spacer has a roughened region with a roughened oxide film, excluding the inner surface of the recess, and a non-roughened region where the roughened oxide film is not formed.
Potential Applications: - This technology can be used in various semiconductor devices to improve electrical connections and performance. - It can be applied in electronic components where precise and reliable connections are crucial.
Problems Solved: - Enhances the electrical connection between the semiconductor element and wiring members. - Provides a stable and efficient conductive spacer for semiconductor devices.
Benefits: - Improved electrical conductivity and reliability. - Enhanced performance and longevity of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the manufacturing of various electronic devices, such as smartphones, computers, and automotive electronics, to improve their overall performance and reliability in the market.
Questions about the technology: 1. How does the roughened region on the conductive spacer improve the performance of the semiconductor device? - The roughened region increases the contact area between the spacer and the semiconductor element, enhancing electrical conductivity and stability. 2. What are the potential challenges in implementing this technology in mass production? - Some challenges may include ensuring uniformity in the roughened oxide film formation and maintaining consistent performance across all devices.
Original Abstract Submitted
A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first wiring member electrically connected to the first main electrode; a second wiring member electrically connected to the second main electrode; and a conductive spacer interposed between the semiconductor element and the first wiring member. The conductive spacer has an end surface facing the semiconductor element and a side surface continuous with the end surface. The side surface has a recess open in the end surface and located adjacent to a pad in a plan view. The side surface has a roughened region in which a roughened oxide film is formed excluding an inner surface of the recess, and a non-roughened region, in which the roughened oxide film is not formed, on the inner surface of the recess.
