18467887. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takashi Inukai of Yokohama Kanagawa (JP)
Hiroki Tokuhira of Kawasaki Kanagawa (JP)
Tsuneo Inaba of Kamakura Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18467887 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers of wiring lines and semiconductor layers separated by insulating layers. Here is a simplified explanation of the patent application:
- The device has a first wiring line in one layer and a second wiring line in another layer, both extending in the same direction.
- There are semiconductor layers that penetrate only one of the wiring lines and extend in a different direction.
- Insulating layers are placed between the wiring lines and semiconductor layers to prevent interference.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by reducing interference between different layers and enhancing the overall functionality of the device.
Benefits
The benefits of this technology include increased speed, reduced power consumption, improved reliability, and higher integration density in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance electronic devices for consumer electronics, telecommunications, automotive, and other sectors.
Possible Prior Art
One possible prior art could be the use of similar multilayer structures in semiconductor devices to improve performance and functionality. However, the specific configuration described in this patent application may be unique in its design and implementation.
Unanswered Questions
How does this technology compare to existing multilayer semiconductor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing multilayer semiconductor structures to evaluate the advantages and disadvantages of this new technology.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges or limitations that may arise when scaling up the production of semiconductor devices using this technology.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first wiring line provided in a first layer and extending in a first direction, a second wiring line provided in a second layer and extending in the first direction, a first semiconductor layer penetrating the first wiring line without penetrating the second wiring line and extending in a second direction, a second semiconductor layer penetrating the second wiring line without penetrating the first wiring line and extending in the second direction, a first insulating layer provided between the first wiring line and the first semiconductor layer, a second insulating layer provided between the second wiring line and the second semiconductor layer.
