18467617. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18467617 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract includes a first contact plug, insulating patterns, and a memory pattern connected to the first contact plug. The upper surfaces of the first contact plug and insulating patterns form an inclined surface that decreases in height as the distance from the center of the first contact plug increases.
- The semiconductor device features an inclined surface formed by the upper surfaces of the first contact plug and insulating patterns.
- The memory pattern is connected to the first contact plug.
- The inclined surface includes a first inclined surface on one side of the center of the first contact plug and a second inclined surface on the opposite side.
- The memory pattern has a lower surface in contact with the first inclined surface.
- The insulating patterns are disposed sequentially along a direction away from the first contact plug.
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuits
Problems Solved: - Improved connectivity between memory patterns and contact plugs - Enhanced performance of semiconductor devices - Efficient use of space in semiconductor design
Benefits: - Increased reliability of memory devices - Higher data transfer speeds - Compact and efficient semiconductor design
Commercial Applications: Title: Advanced Memory Devices for High-Performance Computing This technology can be utilized in the production of high-speed memory devices for applications in data centers, artificial intelligence, and other computing-intensive tasks. The improved connectivity and performance of these devices make them ideal for use in cutting-edge technologies.
Questions about the technology: 1. How does the inclined surface design improve the performance of the semiconductor device? The inclined surface design allows for better contact between the memory pattern and the first contact plug, enhancing the overall efficiency and reliability of the device.
2. What are the potential cost savings associated with implementing this semiconductor technology? By improving the connectivity and performance of memory devices, this technology can lead to cost savings in terms of energy efficiency and reduced maintenance requirements.
Original Abstract Submitted
A semiconductor device includes: a first contact plug disposed over the substrate; two or more insulating patterns disposed on a side surface of the first contact plug and sequentially along a direction away from the first contact plug; and a memory pattern connected to the first contact plug, wherein an upper surface of the first contact plug and upper surfaces of the insulating patterns form an inclined surface whose height decreases as a distance from a center of the first contact plug increases, the inclined surface includes a first inclined surface disposed on a first side of the center of the first contact plug and a second inclined surface disposed on second side of the center of the first contact plug, the second side opposite to the first side, and the memory pattern has a lower surface in contact with the first inclined surface.
