18467251. MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)

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MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME

Organization Name

NEXPERIA B.V.

Inventor(s)

Massimo Cataldo Mazzillo of Nijmegen (NL)

Sönke Habenicht of Nijmegen (NL)

MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18467251 titled 'MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The MPS diode described in the patent application includes a semiconductor body with an active area and a termination area. The active area consists of a drift region of a first conductivity type and multiple wells of a second type, forming PN-junctions with the drift region. A metal layer assembly on the surface of the semiconductor body forms Schottky contacts with the drift region and Ohmic contacts with the wells. The drift region also contains a doped region surrounding each well with a higher dopant concentration.

  • Semiconductor body with active and termination areas
  • Drift region of first conductivity type and wells of second type forming PN-junctions
  • Metal layer assembly creating Schottky and Ohmic contacts
  • Doped region with higher dopant concentration surrounding each well

Potential Applications

The MPS diode technology can be used in:

  • Power electronics
  • Solar panels
  • Electric vehicles

Problems Solved

The MPS diode addresses issues related to:

  • Power efficiency
  • Heat dissipation
  • Voltage regulation

Benefits

The benefits of the MPS diode technology include:

  • Improved performance
  • Higher reliability
  • Enhanced energy efficiency

Potential Commercial Applications

The MPS diode technology can be applied in various industries such as:

  • Semiconductor manufacturing
  • Renewable energy
  • Automotive

Possible Prior Art

One possible prior art for this technology could be:

  • Schottky diodes with similar configurations

Unanswered Questions

How does the dopant concentration affect the performance of the diode?

The higher dopant concentration in the doped region surrounding each well is likely to enhance the diode's conductivity and switching speed. However, the specific impact of this dopant concentration on the overall performance of the diode needs further investigation.

What are the specific manufacturing methods used to create the metal layer assembly in the diode?

While the patent application mentions a metal layer assembly forming Schottky and Ohmic contacts, the detailed manufacturing processes involved in creating this assembly are not provided. Understanding these methods could offer insights into the scalability and cost-effectiveness of producing these diodes.


Original Abstract Submitted

An MPS diode and a manufacturing method is provided. The diode includes a semiconductor body including an active area and an adjacent termination area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second type different from the first conductivity type, the wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the wells. The drift region includes a doped region surrounding each of the wells and having a higher dopant concentration than a remainder of the drift region, and the doped region is spaced apart from the termination area.

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