18467232. MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
Contents
- 1 MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Massimo Cataldo Mazzillo of Nijmegen (NL)
MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18467232 titled 'MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The MPS diode described in the patent application includes a semiconductor body with an active area, a drift region of a first conductivity type, and wells of a second type spaced apart, forming PN-junctions with the drift region. The diode also includes a metal layer assembly forming Schottky contacts with the drift region and Ohmic contacts with the wells. The drift region has a doped region with higher dopant concentration surrounding the wells, decreasing towards the edge of the doped region.
- Semiconductor body with active area
- Drift region of first conductivity type
- Wells of second type forming PN-junctions
- Metal layer assembly for Schottky and Ohmic contacts
- Doped region with higher dopant concentration surrounding wells
Potential Applications
The MPS diode technology can be applied in:
- Power electronics
- High-frequency applications
- Solar inverters
Problems Solved
The MPS diode technology addresses issues such as:
- High power losses
- Voltage spikes
- Switching speed limitations
Benefits
The benefits of the MPS diode technology include:
- Improved efficiency
- Higher power density
- Enhanced reliability
Potential Commercial Applications
The MPS diode technology can be commercially applied in:
- Power supply units
- Electric vehicles
- Renewable energy systems
Possible Prior Art
One possible prior art for this technology could be the development of similar diode structures with different doping profiles and contact configurations.
Unanswered Questions
How does the dopant concentration affect the performance of the MPS diode?
The patent application mentions a varying dopant concentration in the drift region, but it does not elaborate on how this impacts the diode's characteristics.
What manufacturing challenges are associated with creating the doped region in the drift region?
The patent application describes the doped region surrounding the wells, but it does not discuss any potential difficulties in manufacturing this specific structure.
Original Abstract Submitted
An MPS diode and a manufacturing method thereof is provided. The MPS diode includes a semiconductor body with an active area, that includes a drift region of a first conductivity type, and wells of a second type different from the first type, the wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the assembly forming Schottky contacts together with the drift region and the respective Ohmic contacts with the wells. The drift region includes a doped region surrounding the wells, the doped region having a higher dopant concentration than a remainder of the drift region. The dopant concentration in the doped region decreases in a first direction from a center of the doped region to an edge of the doped region.
