18466868. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Toshihiko Nagase of Seoul (KR)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18466868 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The magnetic memory device described in the patent application includes an electrode with a magnetoresistance effect element, where the electrode contains a metal element selected from molybdenum (Mo) and ruthenium (Ru).
- Explanation of the patent/innovation:
- The device utilizes a magnetoresistance effect element to store and retrieve data. - The electrode design with specific metal elements enhances the performance and reliability of the memory device.
- Potential applications of this technology:
- Data storage in electronic devices - Magnetic sensors for various applications
- Problems solved by this technology:
- Improved data storage capacity and speed - Enhanced reliability and durability of memory devices
- Benefits of this technology:
- Faster data access and retrieval - Increased data storage efficiency - Longer lifespan of memory devices
- Potential commercial applications of this technology (SEO optimized title):
- "Innovative Magnetic Memory Device Applications in Electronics and Sensors"
- Possible prior art:
- Previous magnetic memory devices with different electrode compositions - Research on magnetoresistance effect elements in memory technology
Questions:
1. How does the specific metal element selection in the electrode contribute to the performance of the magnetic memory device? 2. What are the specific electronic devices or industries that could benefit the most from this magnetic memory technology?
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).
