18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)

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MAGNETIC MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)

Tadaaki Oikawa of Seoul (KR)

Kazuya Sawada of Seoul (KR)

Naoki Akiyama of Seoul (KR)

Takuya Shimano of Seoul (KR)

Hyungjun Cho of Seoul (KR)

MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18466727 titled 'MAGNETIC MEMORY DEVICE

Simplified Explanation

The abstract describes a magnetic memory device with a unique structure involving a first wiring line, a second wiring line, and a memory cell with magnetoresistance effect and switching elements.

  • The magnetic memory device includes a first wiring line extending in a first direction, a second wiring line on an upper layer side of the first wiring line extending in a second direction intersecting the first direction, and a memory cell between the first and second wiring lines.
  • The memory cell consists of a magnetoresistance effect element and a switching element stacked in a third direction intersecting the first and second directions.
  • The first wiring line is made up of a first conductive layer and a second conductive layer containing carbon (C).

Potential Applications

This technology could be applied in:

  • Data storage devices
  • Magnetic sensors
  • Non-volatile memory systems

Problems Solved

  • Improved data storage density
  • Enhanced memory cell performance
  • Increased efficiency in magnetic memory devices

Benefits

  • Higher data storage capacity
  • Faster data access speeds
  • More reliable memory cells

Potential Commercial Applications

Optimizing Magnetic Memory Devices for Improved Performance

Possible Prior Art

One possible prior art could be the use of magnetoresistance effect elements in memory devices, but the specific structure described in this patent application may be novel.

Unanswered Questions

How does the carbon-containing second conductive layer impact the performance of the memory device?

The abstract mentions the use of a second conductive layer made of a material containing carbon (C), but it does not elaborate on how this choice of material affects the device's functionality.

What are the specific advantages of the memory cell structure described in this patent application compared to existing magnetic memory devices?

While the abstract mentions the unique structure of the memory cell, it does not provide a detailed comparison of the benefits and advantages of this structure over traditional magnetic memory devices.


Original Abstract Submitted

According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).