18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 MAGNETIC MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18466727 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The abstract describes a magnetic memory device with a unique structure involving a first wiring line, a second wiring line, and a memory cell with magnetoresistance effect and switching elements.
- The magnetic memory device includes a first wiring line extending in a first direction, a second wiring line on an upper layer side of the first wiring line extending in a second direction intersecting the first direction, and a memory cell between the first and second wiring lines.
- The memory cell consists of a magnetoresistance effect element and a switching element stacked in a third direction intersecting the first and second directions.
- The first wiring line is made up of a first conductive layer and a second conductive layer containing carbon (C).
Potential Applications
This technology could be applied in:
- Data storage devices
- Magnetic sensors
- Non-volatile memory systems
Problems Solved
- Improved data storage density
- Enhanced memory cell performance
- Increased efficiency in magnetic memory devices
Benefits
- Higher data storage capacity
- Faster data access speeds
- More reliable memory cells
Potential Commercial Applications
Optimizing Magnetic Memory Devices for Improved Performance
Possible Prior Art
One possible prior art could be the use of magnetoresistance effect elements in memory devices, but the specific structure described in this patent application may be novel.
Unanswered Questions
How does the carbon-containing second conductive layer impact the performance of the memory device?
The abstract mentions the use of a second conductive layer made of a material containing carbon (C), but it does not elaborate on how this choice of material affects the device's functionality.
What are the specific advantages of the memory cell structure described in this patent application compared to existing magnetic memory devices?
While the abstract mentions the unique structure of the memory cell, it does not provide a detailed comparison of the benefits and advantages of this structure over traditional magnetic memory devices.
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).
