18465784. SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE simplified abstract (Fujitsu Limited)
Contents
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Yusuke Kumazaki of Atsugi (JP)
Yasuhiro Nakasha of Hadano (JP)
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18465784 titled 'SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
Simplified Explanation:
This patent application describes a semiconductor device with a unique structure that includes a semiconductor layer with specific materials and layers, electrodes, and insulating films to enhance its performance.
- The semiconductor layer contains a channel layer with indium (In), gallium (Ga), and arsenic (As), and an electron supply layer with In, aluminum (Al), and As.
- Source and drain electrodes are formed on the surface of the semiconductor layer, with a gate electrode between them.
- A positively charged insulating film with aluminum oxide (AlO) and oxygen vacancies is formed on the surface side of the semiconductor layer, which affects the density of a two-dimensional electron gas (2DEG) in the channel layer.
Key Features and Innovation:
- Unique semiconductor layer composition with specific materials for improved performance.
- Formation of a positively charged insulating film with aluminum oxide and oxygen vacancies to influence the 2DEG density.
- Source and drain electrodes, along with a gate electrode, for proper functioning of the semiconductor device.
Potential Applications:
- High-performance electronic devices
- Power electronics
- Semiconductor industry
Problems Solved:
- Enhancing the performance of semiconductor devices
- Controlling the density of 2DEG for improved functionality
Benefits:
- Improved efficiency and performance of electronic devices
- Enhanced control over electron density for better device operation
Commercial Applications:
The technology described in this patent application could be utilized in the development of high-performance electronic devices such as smartphones, tablets, and computers. It could also find applications in power electronics for efficient energy management systems.
Prior Art:
Readers interested in exploring prior art related to this technology may consider researching semiconductor device structures, materials, and insulating films used in similar applications.
Frequently Updated Research:
Researchers in the field of semiconductor devices may find ongoing studies on materials and structures for enhancing device performance relevant to this technology.
Questions about Semiconductor Device Technology:
1. What are the key materials used in the semiconductor layer of this device, and how do they contribute to its performance? 2. How does the formation of the positively charged insulating film impact the density of the two-dimensional electron gas in the channel layer?
Original Abstract Submitted
A semiconductor device has a semiconductor layer including a channel layer containing indium (In), gallium (Ga), and arsenic (As) and an electron supply layer laminated over the channel layer and containing In, Al, and As. A source electrode and a drain electrode are formed on a surface side of the semiconductor layer, and a gate electrode is formed between them. A positively charged insulating film containing aluminum oxide (AlO) (y/x<3/2) having oxygen vacancies is formed on the source electrode side from the gate electrode on the surface side of the semiconductor layer. A part of the insulating film may function as a gate insulating film. The density of a two dimensional electron gas (2DEG) in the channel layer on the source electrode side from the gate electrode is relatively higher than that of the 2DEG on the drain electrode side therefrom because of the insulating film.
