18465759. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18465759 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The magnetic memory device described in the patent application includes a lower insulating layer, conductive portions, memory cells with magnetoresistance effect elements, switching elements, and bottom electrodes. The conductive portions are narrower than the bottom electrodes, and there is a void under a region between the memory cells.
- Explanation of the patent:
- Magnetic memory device with unique layout design for improved performance.
- Potential applications of this technology:
- Data storage devices, magnetic sensors, non-volatile memory applications.
- Problems solved by this technology:
- Enhanced memory cell performance, increased data storage capacity, improved data retention.
- Benefits of this technology:
- Higher data transfer speeds, lower power consumption, increased reliability.
- Potential commercial applications of this technology:
- Consumer electronics, automotive systems, industrial automation.
- Possible prior art:
- Previous magnetic memory devices with different layouts and structures.
- Unanswered Questions:
- How does this magnetic memory device compare to existing technologies in terms of data storage capacity?
The article does not provide a direct comparison with existing technologies in terms of data storage capacity.
- What are the potential limitations or drawbacks of implementing this magnetic memory device in practical applications?
The article does not address any potential limitations or drawbacks of implementing this magnetic memory device in practical applications.
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.
