18465405. SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Dong Jin Lee of Suwon-si (KR)

Jun Hee Lim of Suwon-si (KR)

Kang-Oh Yun of Suwon-si (KR)

SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18465405 titled 'SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN

Simplified Explanation

The semiconductor device described in the abstract includes an active region, source/drain regions, contacts, and a gate electrode. The gate electrode surrounds one contact but not the other, creating a unique configuration.

  • The semiconductor device includes an active region for conducting electrical signals.
  • It has first and second source/drain regions located on the active region.
  • There are first and second contacts on the respective source/drain regions.
  • A first gate electrode is positioned on the active region, with a ring portion surrounding the first contact.
  • The second contact extends outside the first ring portion of the gate electrode.

Potential Applications

The technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and communication devices.

Problems Solved

This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and configuration of the components, leading to better functionality and reliability.

Benefits

The unique design of the semiconductor device allows for enhanced control of electrical signals, reduced interference, and improved overall performance. It also offers potential cost savings in manufacturing processes.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for producing high-performance electronic devices with improved functionality and reliability.

Possible Prior Art

Prior art in semiconductor device design may include similar configurations of source/drain regions, contacts, and gate electrodes, but the specific layout described in this patent application appears to be a novel and inventive improvement.

Unanswered Questions

How does this semiconductor device compare to existing technologies in terms of performance and efficiency?

The article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency benefits of this semiconductor device.

What are the specific electronic applications that could benefit the most from this technology?

The article does not specify the particular electronic applications that could derive the most significant advantages from implementing this semiconductor device design.


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes an active region, a first source/drain region disposed on the active region, a first contact on the first source/drain region, a second source/drain region spaced apart from the first source/drain region and disposed on the active region, a second contact on the second source/drain region and a first gate electrode disposed on the active region. The first gate electrode includes a first ring portion, which surrounds the first contact, but the second contact extends outside the first ring portion.