18464993. METHOD FOR FILLING GAP (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
METHOD FOR FILLING GAP
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Hsien Cheng of Hsinchu (TW)
Tai-Chun Huang of Hsinchu (TW)
METHOD FOR FILLING GAP
This abstract first appeared for US patent application 18464993 titled 'METHOD FOR FILLING GAP
Original Abstract Submitted
A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.
