18464348. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Un-Byoung Kang of Suwon-si (KR)
Hyunchul Jung of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18464348 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation: The patent application describes a three-dimensional semiconductor memory device with a unique structure involving gate electrodes and interlayer insulating layers.
- The bottom structure consists of a semiconductor substrate with a cell array region and a connection region, along with a stack of first gate electrodes and interlayer insulating layers.
- The top structure includes a stack of second gate electrodes and interlayer insulating layers on top of the first stack.
- The lengths of the gate electrodes vary based on their position in different directions relative to the semiconductor substrate.
Key Features and Innovation:
- Three-dimensional semiconductor memory device design.
- Alternating stack of gate electrodes and interlayer insulating layers.
- Varying lengths of gate electrodes based on position.
- Unique structure for improved memory performance.
Potential Applications:
- Memory storage in electronic devices.
- Data processing in computing systems.
- High-speed data transfer applications.
Problems Solved:
- Enhanced memory storage capacity.
- Improved data processing speed.
- Efficient use of semiconductor substrate space.
Benefits:
- Higher memory density.
- Faster data access.
- Space-saving design.
Commercial Applications: The technology can be utilized in:
- Smartphones and tablets.
- Computers and servers.
- Data centers and cloud computing facilities.
Questions about Three-Dimensional Semiconductor Memory Devices: 1. How does the unique structure of the memory device impact its performance? 2. What are the potential challenges in manufacturing such complex semiconductor devices?
Frequently Updated Research: Ongoing research focuses on:
- Increasing memory capacity.
- Enhancing data transfer speeds.
- Optimizing the manufacturing process for cost-effectiveness.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a bottom structure and a top structure thereon. The bottom structure may include a semiconductor substrate including a cell array region and a connection region extending therefrom, and a first stack including first gate electrodes and first interlayer insulating layers alternately stacked on the semiconductor substrate. The top structure may include a second stack including second gate electrodes and second interlayer insulating layers alternately stacked on the first stack. Respective lengths of the first gate electrodes in a second direction may decrease as a distance in a first direction increases, and respective lengths of the second gate electrodes in the second direction may increase as a distance in the first direction increases. The first direction may be perpendicular to a bottom surface of the semiconductor substrate, and the second direction may be parallel to the bottom surface of the semiconductor substrate.
