18464287. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (NANYA TECHNOLOGY CORPORATION)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Jhen-Yu Tsai of Kaohsiung City (TW)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18464287 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A memory device includes a substrate, a capacitor, a transistor, a word line, a bit line contact and a body contact. The capacitor is over the substrate. The transistor is over the capacitor, and the transistor includes a channel region, a gate over the channel region, and a source and a drain on opposite sides of the channel region, in which the drain is over the capacitor. The word line is over and electrically connected to the gate of the transistor. The bit line contact is over and electrically connected to the source of the transistor. The body contact is below the source of the transistor.
