18463550. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Junghwan Chun of Suwon-si (KR)
Deokyoung Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463550 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various layers and regions on a substrate, with specific connections and structures to enable its functionality.
- Active region on a substrate in a first direction
- Device isolation layer on the active region
- Source/drain region on the active region
- Interlayer insulating layer on the source/drain region
- Stopper layer on the interlayer insulating layer
- Contact structure passing through the layers and electrically connected to the source/drain region
- Conductive through-structure passing through the device isolation layer and interlayer insulating layer to contact the contact structure and stopper layer
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits
Problems Solved: - Efficient electrical connections in semiconductor devices - Improved device isolation and insulation
Benefits: - Enhanced device performance - Increased reliability - Simplified manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be used in the production of various electronic devices, such as smartphones, computers, and automotive electronics, to improve their overall performance and reliability.
Questions about the technology: 1. How does the stopper layer contribute to the overall functionality of the semiconductor device? 2. What are the specific advantages of using a conductive through-structure in this semiconductor device design?
Original Abstract Submitted
A semiconductor device includes an active region extending on a substrate in a first direction; a device isolation layer on the active region; a source/drain region on the active region; an interlayer insulating layer on the source/drain region; a stopper layer on the interlayer insulating layer; a contact structure passing through the interlayer insulating layer and the stopper layer and electrically connected to the source/drain region; and a conductive through-structure passing through the device isolation layer and the interlayer insulating layer from a lower surface of the substrate, and extending in a third direction, to contact a lower surface of the contact structure and the stopper layer, wherein the stopper layer is in contact with a portion of a side surface of the contact structure, and a lower surface of the stopper layer is lower than an upper surface of the contact structure relative to the substrate.
