18462728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462728 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various regions and layers such as n-type semiconductor layer, p-type drift region, n-type body region, p-type drain region, p-type source region, gate insulating film, gate electrode, and n-type region.
- n-type semiconductor layer
- p-type drift region
- n-type body region
- p-type drain region
- p-type source region
- gate insulating film
- gate electrode
- n-type region
- Potential Applications:**
This semiconductor device could be used in power electronics, integrated circuits, and other electronic devices that require efficient control of electrical currents.
- Problems Solved:**
This technology helps in improving the efficiency and performance of semiconductor devices by optimizing the flow of electrical currents and reducing power losses.
- Benefits:**
The benefits of this technology include enhanced power efficiency, improved device performance, and increased reliability in electronic systems.
- Potential Commercial Applications:**
- Optimizing Electrical Current Flow in Semiconductor Devices*
- Possible Prior Art:**
Prior art in semiconductor devices includes various structures and configurations aimed at improving performance and efficiency, such as different types of transistor designs and materials used in semiconductor manufacturing.
- Unanswered Questions:**
1. How does the size of the semiconductor device impact its performance and efficiency? 2. Are there any limitations to the applications of this technology in specific electronic devices?
Original Abstract Submitted
A semiconductor device includes: an n-type semiconductor layer; a p-type drift region formed in a surface layer of the n-type semiconductor layer; an n-type body region formed in the surface layer of the n-type semiconductor layer so as to be spaced apart from or adjacent to the p-type drift region; a p-type drain region formed in a surface layer of the p-type drift region; a p-type source region formed in a surface layer of the n-type body region; a gate insulating film formed over a surface of the n-type semiconductor layer so as to straddle the p-type drift region and the n-type body region; a gate electrode formed over the gate insulating film; and an n-type region formed in the surface layer of the p-type drift region and arranged between a side edge of the p-type drift region near the n-type body region and the p-type drain region.
