18462677. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sei-Ryung Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462677 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes peripheral active patterns on a substrate, first and second peripheral trench regions adjacent to the peripheral active patterns, isolation liners on the inner surfaces of these trench regions, and a device isolation layer on top of the isolation liners.
- The first isolation liner is on the inner surfaces of the first and second peripheral trench regions.
- A second isolation liner is on the first isolation liner in the first and second peripheral trench regions.
- The device isolation layer includes a seam in the second peripheral trench region.
- The width of the first peripheral trench region is greater than the width of the second peripheral trench region at a specific height.
Potential Applications: - This technology can be used in the manufacturing of semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits.
Problems Solved: - Provides better isolation between components on the semiconductor device. - Helps in reducing interference and crosstalk between different parts of the device.
Benefits: - Enhanced functionality and reliability of semiconductor devices. - Improved signal integrity and overall performance. - Cost-effective manufacturing process.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of smartphones, computers, automotive electronics, and other consumer electronics. It can also benefit industries such as telecommunications, aerospace, and medical devices.
Questions about the technology: 1. How does the width difference in the peripheral trench regions impact the overall performance of the semiconductor device? - The width difference helps in providing better isolation between components, reducing interference, and improving signal integrity.
2. What are the specific advantages of having a seam in the second peripheral trench region of the device isolation layer? - The seam allows for more precise control over the isolation process, leading to enhanced performance and reliability of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes peripheral active patterns on a substrate, first and second peripheral trench regions adjacent the peripheral active patterns, a first isolation liner on inner surfaces of the first and second peripheral trench regions, a second isolation liner on the first isolation liner in the first and second peripheral trench regions, and a device isolation layer on the second isolation liner in the first and second peripheral trench regions. The device isolation layer includes a seam therein in the second peripheral trench region. A width of the first peripheral trench region is greater than a width of the second peripheral trench region at a first height corresponding to top surfaces of the peripheral active patterns with respect to the substrate.
