18460171. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
Organization Name
Inventor(s)
Shingo Sato of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460171 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
The semiconductor device described in the abstract consists of multiple semiconductor regions and electrodes, as well as a gate electrode.
- The first semiconductor region is situated on the first electrode.
- The second semiconductor region is located on the first semiconductor region and is divided into a first part and a second part.
- The third semiconductor region is positioned on a different portion of the first part of the second semiconductor region.
- The fourth semiconductor region is separated from the third semiconductor region by the second part of the second semiconductor region.
- The fifth and sixth semiconductor regions are located on the third and fifth semiconductor regions, respectively.
- The gate electrode faces a portion of the fifth semiconductor region through a gate insulating layer.
- The second electrode is placed on the fifth and sixth semiconductor regions.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance transistors and integrated circuits.
Problems Solved: - This innovation addresses the need for more efficient and compact semiconductor devices. - It provides a solution for enhancing the performance and functionality of electronic devices.
Benefits: - Improved efficiency and performance of semiconductor devices. - Enhanced functionality and reliability of electronic components. - Potential cost savings in the production of advanced electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Performance This technology has significant commercial potential in industries such as telecommunications, consumer electronics, and automotive electronics. It can lead to the development of more advanced and reliable electronic products, attracting interest from manufacturers looking to enhance their offerings in the market.
Questions about the technology: 1. How does this semiconductor device improve electronic performance compared to existing technologies? 2. What are the specific advantages of the innovative structure of the semiconductor regions in this device?
Original Abstract Submitted
A semiconductor device includes first and second electrodes, first to sixth semiconductor regions, and a gate electrode. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The second semiconductor region includes a first part and a second part. The second part is located on a portion of the first part. The third semiconductor region is located on an other portion of the first part. The fourth semiconductor region separated from the third semiconductor region with the second part interposed. The fifth semiconductor region is located on the third semiconductor region. The sixth semiconductor region is located on the fifth semiconductor region. The gate electrode faces the portion of the fifth semiconductor region via a gate insulating layer. The second electrode is located on the fifth and sixth semiconductor regions.
