18459699. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18459699 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various regions and layers such as n-type semiconductor layer, p-type drift region, n-type body region, p-type drain region, p-type source region, gate insulating film, and polysilicon gate. The polysilicon gate consists of a p-type first portion facing the channel region and an n-type second portion facing the drift region.
- n-type semiconductor layer
- p-type drift region
- n-type body region
- p-type drain region
- p-type source region
- gate insulating film
- polysilicon gate
Potential Applications
This technology could be used in power semiconductor devices, such as MOSFETs, for efficient power management in various electronic devices.
Problems Solved
This technology helps in improving the performance and efficiency of power semiconductor devices by optimizing the design and functionality of the device components.
Benefits
- Enhanced power management capabilities - Improved device performance - Increased efficiency in power semiconductor applications
Potential Commercial Applications
Optimizing Power Semiconductor Devices for Enhanced Efficiency
Possible Prior Art
Prior art in the field of power semiconductor devices may include similar designs and configurations aimed at improving device performance and efficiency.
Unanswered Questions
How does this technology compare to existing power semiconductor devices in terms of efficiency and performance?
The article does not provide a direct comparison with existing power semiconductor devices to evaluate the advantages and limitations of this technology.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not delve into the detailed manufacturing processes required to produce the semiconductor device described in the abstract.
Original Abstract Submitted
A semiconductor device includes an n-type semiconductor layer, a p-type drift region formed in a surface layer portion of the semiconductor layer, an n-type body region formed in the surface layer portion of the semiconductor layer, a p-type drain region formed in a surface layer portion of the drift region, a p-type source region formed in a surface layer portion of the body region, a gate insulating film formed on a surface of the semiconductor layer, and a polysilicon gate formed on the gate insulating film, wherein a region extending from the source region to a side edge of the drift region is a channel region, and wherein the polysilicon gate includes a p-type first portion facing at least a portion of the channel region, and an n-type second portion facing at least a portion of the drift region.
