18459353. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Takamitsu Ishihara of Yokohama Kanagawa (JP)

Kazuya Matsuzawa of Kamakura Kanagawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18459353 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The semiconductor memory device described in the abstract includes multiple layers and electrodes surrounding a gate electrode and semiconductor layers. Here is a simplified explanation of the patent application:

• A gate electrode is surrounded by first and second semiconductor layers.
• A first electrode layer surrounds the gate electrode and contacts the first semiconductor layer.
• A second electrode layer surrounds the gate electrode and contacts both semiconductor layers.
• A third electrode layer surrounds the gate electrode and contacts the second semiconductor layer.
• Charge storage layers are located between the gate electrode and each semiconductor layer.

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1. 1. 1. Potential Applications

The technology described in this patent application could be applied in:

• Memory devices
• Integrated circuits
• Semiconductor devices

1. 1. 1. Problems Solved

This technology helps to:

• Improve memory storage capabilities
• Enhance semiconductor device performance
• Increase data retention in memory devices

1. 1. 1. Benefits

The benefits of this technology include:

• Higher memory density
• Faster data access speeds
• Improved overall device efficiency

1. 1. 1. Potential Commercial Applications

This technology could be utilized in:

• Consumer electronics
• Computer hardware
• Telecommunications equipment

1. 1. 1. Possible Prior Art

One possible prior art for this technology could be:

• Previous semiconductor memory devices with similar layer structures

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing memory devices in terms of speed and efficiency?

This article does not provide a direct comparison with existing memory devices.

1. 1. 1. 1. What are the potential challenges in implementing this technology on a large scale in commercial products?

The article does not address the challenges of large-scale implementation of this technology.

Original Abstract Submitted

A semiconductor memory device includes a gate electrode and a first and second semiconductor layer surrounding the gate electrode. A first electrode layer surrounds the gate electrode and contacts the first semiconductor layer. A second electrode layer surrounds the gate electrode and contacts the first and second semiconductor layers. The first semiconductor layer is between the first and second electrode layers. A third electrode layer surrounds the gate electrode and contacts the second semiconductor layer. The second semiconductor layer is between the second and third electrode layers. A first charge storage layer is between the gate electrode and the first semiconductor layer. A second charge storage layer is between the gate electrode and the second semiconductor layer.