18459216. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)
Contents
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Won Geun Choi of Icheon-si Gyeonggi-do (KR)
Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)
Jung Shik Jang of Icheon-si Gyeonggi-do (KR)
Seok Min Choi of Icheon-si Gyeonggi-do (KR)
In Su Park of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18459216 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
The memory device described in the abstract consists of two stack structures, each containing alternating layers of interlayer insulating layers and conductive layers for word lines, with an etch stop layer between them and word line contacts extending through both stack structures.
- The memory device includes a first stack structure with multiple interlayer insulating layers and conductive layers for first word lines, and a second stack structure with similar layers for second word lines.
- A first etch stop layer is positioned between the first and second stack structures.
- Word line contacts extend through both stack structures and the etch stop layer.
Potential Applications: - This technology can be used in various memory devices, such as flash memory or DRAM. - It can also be applied in other semiconductor devices requiring precise layering and contact structures.
Problems Solved: - The technology addresses the need for efficient memory devices with complex stacking structures. - It provides a solution for creating reliable word line contacts within the device.
Benefits: - Improved performance and reliability of memory devices. - Enhanced scalability and integration of multiple layers in semiconductor devices.
Commercial Applications: - The technology can be utilized in the production of advanced memory chips for consumer electronics, data storage, and computing devices. - It has potential applications in the semiconductor industry for developing high-density memory solutions.
Questions about the technology: 1. How does the etch stop layer contribute to the functionality of the memory device? 2. What are the advantages of having word line contacts extending through multiple stack structures?
Original Abstract Submitted
There are provided a memory device and a manufacturing method thereof. The memory device includes: a first stack structure including a plurality of first interlayer insulating layers and a plurality of conductive layers for first word lines, which are alternately stacked; and a second stack structure including a plurality of second interlayer insulating layers and a plurality of conductive layers for second word lines, which are alternately stacked; a first etch stop layer disposed between the first stack structure and the second stack structure; and a plurality of first word line contacts extending to the inside of the first stack structure through the second stack structure and the first etch stop layer.
