18458489. TRANSISTOR DEVICE simplified abstract (Infineon Technologies AG)
Contents
- 1 TRANSISTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TRANSISTOR DEVICE
Organization Name
Inventor(s)
Andreas Urban Bertl of Villach (AT)
TRANSISTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18458489 titled 'TRANSISTOR DEVICE
Simplified Explanation
The patent application describes a transistor device with specific features to improve its performance and efficiency.
- Semiconductor substrate with first dopant type
- Highly doped source and drain regions of second dopant type
- Gate structure with gate electrode
- Lightly doped region under the gate electrode
- Channel region with consistent doping level along the lateral direction
Potential Applications
This technology can be applied in:
- Integrated circuits
- Microprocessors
- Power amplifiers
Problems Solved
This technology addresses issues such as:
- Leakage current
- Heat dissipation
- Signal distortion
Benefits
The benefits of this technology include:
- Improved performance
- Higher efficiency
- Enhanced reliability
Potential Commercial Applications
This technology can be commercially benefit:
- Electronics industry
- Semiconductor manufacturers
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- MOSFET transistor designs from the past decade
Unanswered Questions
How does this technology compare to existing transistor designs in terms of power consumption?
This article does not provide specific data on power consumption comparisons with other transistor designs.
What are the potential limitations of implementing this technology in mass production?
The article does not address the challenges or limitations that may arise when scaling up production of this transistor design.
Original Abstract Submitted
A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a gate structure arranged on the first surface and including a gate electrode formed on the first surface; and a first lightly doped region formed in the first surface and extending from the highly doped source region under the gate electrode. A channel region extends between the first lightly doped region and the highly doped drain region. The channel region has an average doping level of the first dopant type of n×10that varies by less than 0.5×n×10between the first lightly doped region and the highly doped drain region along the lateral direction parallel to the first surface.
