18458447. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18458447 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract consists of a complex structure involving lower and upper layers, active regions, source/drain regions, and gate structures.
- Lower structure includes lower source/drain regions, lower active layers, and a lower gate structure.
- Upper structure includes upper source/drain regions, upper active layers, and an upper gate structure.
- Lower active layers are spaced apart and vertically overlap with upper active layers.
- Upper source/drain regions vertically overlap with lower source/drain regions.
- Upper gate structure vertically overlaps with lower gate structure.
Potential Applications: - This semiconductor device can be used in advanced electronic devices such as smartphones, tablets, and computers. - It can also be applied in high-performance computing systems and data centers.
Problems Solved: - The device offers improved performance and efficiency compared to traditional semiconductor structures. - It provides better control over the flow of electrical current, enhancing overall device functionality.
Benefits: - Enhanced speed and efficiency in electronic devices. - Improved power management and reduced energy consumption. - Increased reliability and longevity of semiconductor components.
Commercial Applications: - This technology can be utilized by semiconductor manufacturers to produce cutting-edge electronic devices with superior performance. - It has the potential to impact various industries such as telecommunications, automotive, and aerospace.
Questions about the Technology: 1. How does the vertical overlapping of active layers contribute to the performance of the semiconductor device? 2. What specific advantages does the upper gate structure provide in terms of device functionality and control?
Original Abstract Submitted
A semiconductor device includes a lower structure; a barrier layer on the lower structure; and an upper structure on the barrier layer, wherein the lower structure includes lower source/drain regions; lower active layers spaced apart from each other, between the lower source/drain regions; and a lower gate structure and including portions below each of the lower active layers, wherein the upper structure includes upper source/drain regions and vertically overlapping the lower source/drain regions; upper active layers spaced apart from each other, between the upper source/drain regions, and vertically overlapping the lower active layers; and an upper gate structure, including portions on each of the upper active layers, and vertically overlapping the lower gate structure, and wherein the uppermost lower active layer of the lower active layers and the lowermost upper active layer of the upper active layers are in contact with the barrier layer.
