18458050. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Daichi Nishikawa of Mie Mie (JP)
Daisuke Ikeno of Yokkaichi Mie (JP)
Atsuko Sakata of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18458050 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a pillar made of an oxide semiconductor material, surrounded by a gate insulating layer with lower, upper, and intermediate portions. A gate electrode surrounds the intermediate portion of the gate insulating layer, while a lower electrode with a first oxide conductor portion is connected to the lower surface of the pillar. An upper electrode is connected to the upper surface of the pillar. The gate electrode contains a metal portion with a metallic element and a first nitrogen-containing portion, while the first oxide conductor portion includes a second nitrogen-containing portion at the interface with the gate insulating layer.
- The semiconductor device includes a pillar of an oxide semiconductor material.
- The gate insulating layer surrounds a side surface of the pillar, with lower, upper, and intermediate portions.
- The gate electrode surrounds the intermediate portion of the gate insulating layer.
- A lower electrode with a first oxide conductor portion is connected to the lower surface of the pillar.
- An upper electrode is connected to the upper surface of the pillar.
- The gate electrode contains a metal portion with a metallic element and a first nitrogen-containing portion.
- The first oxide conductor portion includes a second nitrogen-containing portion at the interface with the gate insulating layer.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure and materials used in their fabrication, leading to enhanced functionality and reliability.
Benefits
The use of oxide semiconductor materials and specific nitrogen-containing portions in the gate insulating layer and electrodes can result in enhanced device performance, lower power consumption, and increased durability, contributing to the advancement of semiconductor technology.
Potential Commercial Applications
The innovative semiconductor device design outlined in this patent application has the potential for commercial applications in the semiconductor industry, particularly in the development of next-generation electronic devices for a wide range of markets.
Possible Prior Art
One possible prior art in this field could be the use of different materials and structures in semiconductor devices to improve their performance and efficiency. Research and development in the semiconductor industry have continuously focused on enhancing device capabilities through innovative designs and materials.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a pillar of an oxide semiconductor material and a gate insulating layer that surrounds a side surface of the pillar. The gate insulating layer includes a lower portion, an upper portion, and an intermediate portion. A gate electrode surrounds the intermediate portion of the gate insulating layer. A lower electrode is provided that includes a first oxide conductor portion that is connected to a lower surface of the pillar. An upper electrode is provided connected to an upper surface of the pillar. The gate electrode includes a metal portion containing a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. The first oxide conductor portion includes a second nitrogen-containing at an interface between the first oxide conductor portion and the gate insulating layer.
