18456927. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456927 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device that includes a substrate, insulating layer, conductive layer, stacked body, columnar section, and a source layer.
- The semiconductor memory device includes a substrate, insulating layer, conductive layer, stacked body, columnar section, and a source layer.
- The stacked body consists of multiple electrode layers and insulating layers.
- The columnar section extends through the stacked body and reaches the conductive layer.
- The columnar section includes a channel body and a charge storage film between the channel body and the electrode layers.
- The conductive layer includes a first film with electric conductivity and is in contact with the lower end of the channel body.
- An air gap is provided and covered by the first film.
Potential applications of this technology:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Data storage in cloud computing and data centers.
- High-speed data processing in artificial intelligence and machine learning systems.
Problems solved by this technology:
- Improved performance and reliability of semiconductor memory devices.
- Enhanced data storage capacity and speed.
- Reduction in power consumption and heat generation.
Benefits of this technology:
- Increased memory density and storage capacity.
- Faster data access and processing.
- Lower power consumption and improved energy efficiency.
Original Abstract Submitted
According to one embodiment, a semiconductor memory device includes a substrate; an insulating layer provided on the substrate; a conductive layer provided on the insulating layer; a stacked body provided on the conductive layer and including a plurality of electrode layers and a plurality of insulating layers respectively provided among the plurality of electrode layers; a columnar section piercing through the stacked body to reach the conductive layer and extending in a first direction in which the stacked body is stacked; and a source layer. The columnar section includes a channel body and a charge storage film provided between the channel body and the respective electrode layers. The conductive layer includes a first film having electric conductivity and in contact with the lower end portion of the channel body; and an air gap provided to be covered by the first film.
