18456855. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Organization Name
Inventor(s)
Hideki Sekiguchi of Yokohama Kanagawa (JP)
Akira Yoshioka of Yokohama Kanagawa (JP)
Toru Sugiyama of Musashino Tokyo (JP)
Yasuhiro Isobe of Narashino Chiba (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456855 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
Simplified Explanation:
The semiconductor device described in the abstract consists of multiple layers, electrodes, an insulating region, and a conductive layer.
- The device includes first and second semiconductor layers.
- It has first to third electrodes, with the first electrode located on the second semiconductor layer.
- The second electrode is positioned in a second direction relative to the first electrode, with the third electrode between them.
- An insulating region, made up of first and second insulating portions, is located on the second semiconductor layer.
- A conductive layer is situated between the first and second insulating portions and is electrically connected to the first electrode.
Key Features and Innovation:
- Multilayer semiconductor structure
- Specific electrode positioning
- Insulating region with multiple portions
- Electrically connected conductive layer
Potential Applications:
This technology could be used in various semiconductor devices, such as transistors, diodes, and integrated circuits.
Problems Solved:
This innovation addresses the need for efficient and reliable semiconductor devices with precise electrode placement and insulating regions.
Benefits:
- Enhanced performance and functionality of semiconductor devices
- Improved electrical connectivity and insulation
- Potential for smaller and more compact device designs
Commercial Applications:
The technology could have significant implications in the electronics industry, particularly in the development of advanced semiconductor devices for various applications.
Questions about Semiconductor Devices:
1. How does the specific electrode positioning in this semiconductor device contribute to its overall performance? 2. What are the potential challenges in manufacturing semiconductor devices with multiple insulating regions and layers?
Original Abstract Submitted
A semiconductor device includes first and second semiconductor layers, first to third electrodes, an insulating region and a conductive layer. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The second electrode is located on the second semiconductor layer and arranged with the first electrode in a second direction. The third electrode is positioned between the first electrode and the second electrode. The insulating region is located on the second semiconductor layer. The insulating region is between the first electrode and the second electrode and next to the first electrode. The insulating region includes first and second insulating portions. The second insulating portion is positioned above the first insulating portion. The conductive layer is located between the first insulating portion and the second insulating portion. The conductive layer is electrically connected with the first electrode.
