18456419. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yusuke Kasahara of Yokkaichi Mie (JP)
Kappei Imamura of Kuwana Mie (JP)
Akifumi Gawase of Kuwana Mie (JP)
Shinji Mori of Nagoya Aichi (JP)
Akihiro Kajita of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456419 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with an oxide semiconductor column extending through multiple layers, including insulating and conductive layers. The column has different semiconductor portions at specific positions within the device.
- The semiconductor device includes a first conductive layer sandwiched between first and second insulating layers.
- An oxide semiconductor column extends through these layers in a specific direction.
- A third insulating layer covers the column.
- The column has distinct semiconductor portions at different positions within the device.
- The first semiconductor portion aligns with the first insulating layer, the second semiconductor portion aligns with the second insulating layer, and the third semiconductor portion aligns with the first conductive layer.
- The first and second semiconductor portions are continuous along a certain direction, while the third semiconductor portion is not continuous in that direction.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
This innovation helps address issues related to:
- Semiconductor device miniaturization
- Enhanced performance and efficiency
- Improved reliability of semiconductor devices
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Higher integration density
- Enhanced overall performance
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with similar multi-layer structures
- Previous innovations in oxide semiconductor technology
Unanswered Questions
How does this technology compare to existing semiconductor structures?
This article does not provide a direct comparison to existing semiconductor structures in terms of performance, efficiency, or cost-effectiveness.
What specific manufacturing processes are required for implementing this technology?
The article does not delve into the detailed manufacturing processes needed to incorporate this semiconductor device structure.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.
