18455993. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (Kabushiki Kaisha Toshiba)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING

Organization Name

Kabushiki Kaisha Toshiba

Inventor(s)

Akira Yoshioka of Yokohama Kanagawa (JP)

Hitoshi Kobayashi of Yamato Kanagawa (JP)

Hideki Sekiguchi of Yokohama Kanagawa (JP)

Hung Hung of Kawasaki Kanagawa (JP)

Yasuhiro Isobe of Narashino Chiba (JP)

Toru Sugiyama of Musashino Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18455993 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING

Simplified Explanation: The semiconductor device described in the patent application consists of multiple layers and electrodes, with insulating and conductive parts in between.

• The device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode.
• The second semiconductor layer is situated on top of the first semiconductor layer.
• The first electrode is placed on the second semiconductor layer and comprises an electrode part and an electrode extension part.
• A conductive part is positioned between the first and second electrodes, contacting the second semiconductor layer and the first electrode.
• An insulating part is located on the conductive part, separating it from the electrode extension part.

Key Features and Innovation:

• Multilayer semiconductor device design.
• Specific positioning of electrodes and insulating/conductive parts.
• Enhanced functionality and performance of the device.

Potential Applications:

• Electronics industry for various semiconductor applications.
• Power management systems.
• Sensor technology.

Problems Solved:

• Improved efficiency and reliability of semiconductor devices.
• Enhanced electrical conductivity and insulation.

Benefits:

• Higher performance capabilities.
• Increased durability and longevity.
• Enhanced functionality in various applications.

Commercial Applications: Potential commercial applications include:

• Semiconductor manufacturing companies.
• Electronics manufacturers.
• Research institutions in the field of semiconductor technology.

Prior Art: Readers can explore prior art related to semiconductor device design, electrode positioning, and insulating/conductive part integration in semiconductor technology patents and research publications.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor device design, electrode technology, and insulating/conductive materials for improved performance and functionality.

Questions about Semiconductor Device Design: 1. How does the specific positioning of electrodes and insulating/conductive parts impact the overall performance of the semiconductor device? 2. What are the potential challenges in manufacturing and implementing this multilayer semiconductor device design in practical applications?

Original Abstract Submitted

A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.