18455508. SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL (Applied Materials, Inc.)
Contents
SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL
Organization Name
Inventor(s)
Supriya Ghosh of San Jose CA (US)
Susmit Singha Roy of Campbell CA (US)
Abhijit Basu Mallick of Sunnyvale CA (US)
Nitin K. Ingle of San Jose CA (US)
Diwakar Kedlaya of San Jose CA (US)
Priya Chouhan of Fremont CA (US)
SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL
This abstract first appeared for US patent application 18455508 titled 'SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL
Original Abstract Submitted
Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.
