18454960. STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
STORAGE DEVICE
Organization Name
Inventor(s)
Takeshi Iwasaki of Kuwana Mie (JP)
Katsuyoshi Komatsu of Yokkaichi Mie (JP)
Jieqiong Zhang of Chiyoda Tokyo (JP)
STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18454960 titled 'STORAGE DEVICE
Simplified Explanation
The storage device described in the patent application consists of multiple conductive layers, a variable resistance layer, and a switching layer with specific elements in different areas.
- The storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer, and a switching layer.
- The variable resistance layer is located between the first and second conductive layers.
- The switching layer is positioned between the second and third conductive layers.
- The switching layer contains three areas with specific elements in each area: Sn, Ga, Zn, Ta, Ti, In, O, N, Zr, Y, Ce, Hf, Al, Mg, Nb, Te, Sb, Bi, Ti, Zn.
Potential Applications
The technology described in this patent application could be applied in:
- Non-volatile memory devices
- Resistive random-access memory (RRAM) devices
Problems Solved
This technology helps in:
- Improving data storage efficiency
- Enhancing device performance and reliability
Benefits
The benefits of this technology include:
- Faster data access and retrieval
- Lower power consumption
- Increased data storage capacity
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage solutions
Possible Prior Art
One possible prior art for this technology could be the development of resistive random-access memory (RRAM) devices using similar materials and structures.
Unanswered Questions
How does this technology compare to existing storage devices in terms of speed and reliability?
This article does not provide a direct comparison with existing storage devices in terms of speed and reliability. Further research or testing may be needed to determine the performance of this technology in comparison to others.
What are the potential challenges in scaling up the production of devices using this technology for mass commercial use?
The article does not address the potential challenges in scaling up production for mass commercial use. Factors such as cost, manufacturing processes, and market demand could impact the scalability of this technology. Additional studies or analyses may be required to assess these challenges.
Original Abstract Submitted
A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.
