18454112. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18454112 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with a unique backside contact structure for improved performance.
- Insulating structure with source/drain region
- Pair of bottom semiconductor sheets spaced apart with source/drain region in between
- Pair of channel regions with bottom semiconductor sheets
- Gate lines on channel regions extending in a perpendicular direction
- Backside contact structure reaching the bottom surface of the source/drain region
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Enhanced performance and efficiency in integrated circuits - Improved contact structure for better connectivity
Benefits: - Increased functionality and reliability - Enhanced electrical performance - Potential for smaller and more efficient devices
Commercial Applications: Title: "Advanced Integrated Circuit Devices with Improved Contact Structures" This technology can be utilized in the development of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Researchers can explore prior patents related to integrated circuit design, semiconductor manufacturing, and contact structures to gain a deeper understanding of the existing technology landscape.
Frequently Updated Research: Researchers in the field of semiconductor engineering and integrated circuit design may be conducting ongoing studies on contact structures and their impact on device performance. Stay updated on the latest advancements in this area to leverage cutting-edge technology in your projects.
Questions about Integrated Circuit Devices with Backside Contact Structures:
1. How does the backside contact structure improve the performance of integrated circuit devices? The backside contact structure enhances connectivity and efficiency within the device, leading to improved overall performance.
2. What are the key advantages of using a backside contact structure in semiconductor manufacturing? The backside contact structure allows for better electrical contact and can contribute to increased functionality and reliability in integrated circuits.
Original Abstract Submitted
An integrated circuit device includes an insulating structure, a source/drain region on the insulating structure, a pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction, a pair of channel regions spaced apart from the insulating structure with the bottom semiconductor sheets therebetween, a pair of gate lines respectively extending on the pair of channel regions on the bottom semiconductor sheets and extending longitudinally in a second horizontal direction perpendicular to the first horizontal direction, and a backside contact structure extending through the insulating structure to contact a bottom surface of the source/drain region, the backside contact structure including a first contact portion that has a width in the first horizontal direction increasing toward the source/drain region and a second contact portion that has a width in the first horizontal direction decreasing toward the source/drain region.
