18453546. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Jeongyeon Seo of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18453546 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with a fin-type active region, device isolation film, insulating liner structure, via power rail, and backside power rail.
- Fin-type active region extends from the substrate in a first lateral direction.
- Device isolation film is on a trench region on the substrate.
- Insulating liner structure extends through the substrate in a vertical direction and contacts the device isolation film at a first vertical level.
- Via power rail extends through the device isolation film in the vertical direction with a bottom surface at a second vertical level.
- Backside power rail includes a main rail and a protrusion rail, with the main rail extending through the substrate and insulating liner structure in the vertical direction, and the protrusion rail extending from the main rail toward the via power rail.
Potential Applications: - This technology can be used in the semiconductor industry for advanced integrated circuit devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the power distribution and isolation capabilities of integrated circuits. - Enables more compact and efficient circuit designs.
Benefits: - Improved power distribution efficiency. - Enhanced device performance and reliability. - Enables smaller and more advanced electronic devices.
Commercial Applications: Title: Advanced Power Distribution Technology for Integrated Circuits This technology can be applied in the development of high-performance computing devices, mobile phones, and other consumer electronics. It can also benefit industries such as automotive electronics and IoT devices.
Questions about the technology: 1. How does this technology improve power distribution in integrated circuits? 2. What are the key advantages of using a fin-type active region in this context?
Original Abstract Submitted
An integrated circuit device includes a fin-type active region that extends from a substrate and in a first lateral direction, a device isolation film on a trench region on the substrate, an insulating liner structure that extends through the substrate in a vertical direction and contacts the device isolation film at a first vertical level, a via power rail that extends through the device isolation film in the vertical direction and comprising a first bottom surface at a second vertical level, and a backside power rail comprising a main rail and a protrusion rail, where the main rail extends through the substrate and the insulating liner structure in the vertical direction, and where the protrusion rail extends from the main rail toward the via power rail.
