18452573. MEMORY DEVICE AND STORAGE DEVICE simplified abstract (SK hynix Inc.)
Contents
MEMORY DEVICE AND STORAGE DEVICE
Organization Name
Inventor(s)
Dong Hun Kwak of Gyeonggi-do (KR)
MEMORY DEVICE AND STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18452573 titled 'MEMORY DEVICE AND STORAGE DEVICE
Simplified Explanation: The patent application describes a memory device with memory cells stacked vertically, each containing two sub-memory cells of different sizes. The device includes a storage for sub-memory cell size information, a peripheral circuit for programming operations, and control logic for data storage based on the sub-memory cell sizes.
- Memory device with vertically stacked memory cells
- Each cell has two sub-memory cells of different sizes
- Storage for sub-memory cell size information
- Peripheral circuit for programming operations
- Control logic for data storage based on sub-memory cell sizes
Potential Applications: 1. High-density data storage devices 2. Advanced computing systems 3. Artificial intelligence applications 4. Internet of Things (IoT) devices
Problems Solved: 1. Increased data storage capacity 2. Enhanced performance in computing tasks 3. Efficient data processing and retrieval 4. Space-saving design for memory devices
Benefits: 1. Improved memory storage efficiency 2. Faster data processing speeds 3. Enhanced overall system performance 4. Reduction in physical footprint for memory devices
Commercial Applications: The technology can be utilized in the development of next-generation memory devices for various industries such as data storage, computing, AI, and IoT, leading to more efficient and powerful systems.
Questions about Memory Device Technology: 1. How does the size difference between the two sub-memory cells impact the overall performance of the memory device? 2. What are the potential challenges in implementing this memory device technology in real-world applications?
Frequently Updated Research: Researchers are constantly exploring new ways to enhance memory device technology, focusing on improving data storage capacity, speed, and efficiency. Stay updated on the latest advancements in the field to leverage the full potential of this innovative technology.
Original Abstract Submitted
According to an embodiment of the present disclosure, a memory device may include a memory cell array including memory cells stacked in a direction perpendicular to a substrate, each of the memory cells including a first sub-memory cell and a second sub-memory cell having a size larger than a size of the first sub-memory cell, a sub-memory cell information storage configured to store sub-memory cell size information on the sizes of the first sub-memory cell and the second sub-memory cell, a peripheral circuit configured to perform a program operation on a selected sub-memory cell among the memory cells, and a control logic configured to control the peripheral circuit to store data in each of the first sub-memory cell and the second sub-memory cell based on the sub-memory cell size information.
