18450541. PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)
Contents
- 1 PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS
Organization Name
Inventor(s)
PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18450541 titled 'PHOTOELECTRIC CONVERSION APPARATUS, DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS
Simplified Explanation
The patent application describes a photoelectric conversion apparatus with a semiconductor layer containing pixels with photoelectric conversion elements, wiring layers, and wiring patterns with a specific pattern density in the peripheral region.
- The apparatus includes a semiconductor layer with pixels containing photoelectric conversion elements.
- Multiple wiring layers are present on one side of the semiconductor layer opposite the light receiving surface.
- Wiring patterns in the closest wiring layer to the main surface have a specific pattern density in the peripheral region.
- The pattern density of the wiring patterns in the peripheral region is 35% or more in an arbitrary 100 μm region.
Potential Applications
- Solar panels
- Digital cameras
- Image sensors
Problems Solved
- Efficient photoelectric conversion
- Improved wiring layout
- Enhanced performance of semiconductor devices
Benefits
- Higher energy conversion efficiency
- Better image quality
- Increased overall device performance
Original Abstract Submitted
A photoelectric conversion apparatus is provided. The apparatus includes a semiconductor layer that includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged. A plurality of wiring layers are arranged on a side of a main surface on the opposite side to a light receiving surface of the semiconductor layer, and a plurality of wiring patterns are arranged in a wiring layer closest to the main surface among the plurality of wiring layers. A pattern density of the wiring patterns arranged in a peripheral region between the pixel region and an outer edge of the semiconductor layer among the plurality of wiring patterns is 35% or more in an arbitrary 100 μmregion of the peripheral region.
