18449078. OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME
Organization Name
Inventor(s)
Myoungho Kang of SUWON-SI (KR)
OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18449078 titled 'OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME
Simplified Explanation: The patent application describes a method for optical proximity correction (OPC) in semiconductor manufacturing. This method involves generating a mask layout for target patterns on a wafer, dividing edges of the mask layout into fragments, rotating the mask layout at a predetermined angle to create a rotated mask layout, extracting a contour of a target pattern using an OPC model, calculating edge placement errors for each fragment, and adjusting the fragments based on the calculated displacements.
Key Features and Innovation:
- Generation of a rotated mask layout to improve accuracy in pattern extraction.
- Calculation of edge placement errors to optimize the OPC process.
- Dynamic adjustment of fragments based on calculated displacements for precise pattern alignment.
Potential Applications: This technology can be applied in the semiconductor industry for enhancing the accuracy and quality of pattern transfer processes in wafer manufacturing.
Problems Solved: The method addresses the challenge of achieving high precision in pattern alignment and edge placement during semiconductor manufacturing processes.
Benefits:
- Improved accuracy in pattern extraction and alignment.
- Enhanced quality and consistency in semiconductor manufacturing.
- Increased efficiency in the OPC process.
Commercial Applications: The technology can be utilized in semiconductor fabrication facilities to optimize the production of integrated circuits and other semiconductor devices.
Prior Art: Researchers can explore prior studies on OPC methods in semiconductor manufacturing to understand the evolution of techniques in this field.
Frequently Updated Research: Ongoing research in OPC methods and advanced lithography techniques may provide further insights into improving pattern accuracy and alignment in semiconductor manufacturing.
Questions about Optical Proximity Correction: 1. What are the key challenges in achieving precise pattern alignment in semiconductor manufacturing? 2. How does the use of OPC models contribute to improving pattern extraction accuracy in wafer production?
Original Abstract Submitted
An optical proximity correction (OPC) method includes generating a mask layout for target patterns on a wafer, dividing edges of the mask layout into fragments, generating a rotated mask layout by rotating the mask layout at a predetermined angle, extracting a contour of a target pattern by inputting data on the fragments of the rotated mask layout to an OPC model, calculating an edge placement error (EPE) for each fragment, determining whether to re-perform the extracting of the contour of the target pattern, calculating displacements of the fragments when it is determined that the extracting of the contour of the target pattern is re-performed, and moving the fragments by the displacements.
