18448393. TEMPERATURE BASED BLOCK READ simplified abstract (Western Digital Technologies, Inc.)

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TEMPERATURE BASED BLOCK READ

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

MANOJ M. Shenoy of Bengaluru (IN)

ARUNKUMAR Mani of Bengaluru (IN)

ARVIND Sundaramoorthi of Krishnagiri (IN)

TEMPERATURE BASED BLOCK READ - A simplified explanation of the abstract

This abstract first appeared for US patent application 18448393 titled 'TEMPERATURE BASED BLOCK READ

Simplified Explanation

The patent application describes a solid-state memory device that can perform temperature-based block reads. It includes memory cells and a controller that tracks and adjusts read voltages based on the temperature of the memory cells.

Key Features and Innovation

  • Array of non-volatile memory cells
  • Controller that tracks temperature for memory cell regions
  • Adjusts read voltage threshold based on temperature
  • Performs read operations using adjusted voltage threshold

Potential Applications

This technology can be used in various electronic devices that require efficient and reliable memory storage, such as smartphones, tablets, and computers.

Problems Solved

This technology addresses the issue of read errors in memory devices caused by temperature fluctuations, ensuring accurate data retrieval.

Benefits

  • Improved data accuracy
  • Enhanced memory performance
  • Increased reliability of memory storage

Commercial Applications

  • Consumer electronics
  • Data storage devices
  • Industrial automation systems

Questions about Solid-State Memory Device

How does temperature affect memory cell performance?

Temperature can impact the conductivity and reliability of memory cells, affecting read and write operations.

What are the advantages of temperature-based block reads in memory devices?

Temperature-based block reads help optimize memory performance and reduce errors by adjusting read voltages based on temperature conditions.


Original Abstract Submitted

A solid-state memory device that performs temperature-based block reads includes an array of non-volatile memory cells and a controller. The controller is configured to track a temperature for a region of the array of non-volatile memory cells in response to data being written to the region. The controller is configured to determine a read voltage threshold for a read request for the region based on both the tracked temperature for the region and a temperature determined for the region in response to a read request. The controller is configured to perform a read operation for the region using the determined read voltage threshold.