18447673. PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ching-Yu Chang of Hsinchu (TW)
Chin-Hsiang Lin of Hsinchu (TW)
PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447673 titled 'PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL
The patent application describes a patterning stack consisting of a bottom anti-reflective coating (BARC) layer, a photoresist layer with high etching resistance, and a top coating layer with even greater etching resistance.
- The top coating layer contains a polymer with a polymer backbone that includes high etching resistance functional units and acid labile groups.
- The polymer backbone may also be attached to a silicon cage compound for added stability and resistance.
- This innovative design allows for precise patterning and etching processes in semiconductor manufacturing.
Potential Applications:
- Semiconductor manufacturing processes requiring precise patterning and etching.
- Advanced lithography techniques in the production of microelectronics.
Problems Solved:
- Improved control over etching processes.
- Enhanced resolution and accuracy in patterning.
Benefits:
- Higher quality and more reliable semiconductor devices.
- Increased efficiency in manufacturing processes.
Commercial Applications:
- Advanced semiconductor fabrication facilities.
- Companies specializing in microelectronics production.
Prior Art: Prior research may include studies on polymer-based coatings for lithography processes and etching techniques in semiconductor manufacturing.
Frequently Updated Research: Ongoing studies may focus on optimizing the composition of the top coating layer for even greater etching resistance and stability.
Questions about Patterning Stack Technology:
1. How does the top coating layer with high etching resistance improve the semiconductor manufacturing process? 2. What are the potential drawbacks or limitations of using a patterning stack in lithography processes?
Original Abstract Submitted
A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attacked to the polymer backbone or a silicon cage compound.
