18444419. PHOTOELECTRIC CONVERSION DEVICE simplified abstract (CANON KABUSHIKI KAISHA)

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PHOTOELECTRIC CONVERSION DEVICE

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

MAHITO Shinohara of Tokyo (JP)

PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18444419 titled 'PHOTOELECTRIC CONVERSION DEVICE

Simplified Explanation:

The patent application describes a photoelectric conversion device that can switch between two voltages to efficiently convert light into electrical signals.

  • The device includes a photoelectric conversion unit with different semiconductor regions forming a p-n junction.
  • A control circuit switches the reverse bias voltage between two voltages to accumulate and transfer signal charge effectively.
  • Avalanche multiplication occurs at the p-n junction to enhance the conversion efficiency.
  • The control circuit changes the reverse bias voltage to a rectangular shape for optimal performance.

Key Features and Innovation:

  • Efficient switching between two voltages for optimal signal charge accumulation and transfer.
  • Avalanche multiplication at the p-n junction for enhanced conversion efficiency.
  • Control circuit with a unique rectangular shape reverse bias voltage for improved performance.

Potential Applications:

The technology can be used in:

  • Solar panels
  • Image sensors
  • Photodetectors

Problems Solved:

  • Efficient conversion of light into electrical signals
  • Enhanced performance in low-light conditions

Benefits:

  • Improved energy conversion efficiency
  • Better performance in challenging lighting conditions

Commercial Applications:

Potential commercial applications include:

  • Solar energy systems
  • Surveillance cameras
  • Medical imaging devices

Prior Art:

Readers can explore prior art related to this technology in the field of photoelectric conversion devices and semiconductor physics.

Frequently Updated Research:

Stay updated on the latest research in photoelectric conversion devices and semiconductor technology for advancements in efficiency and performance.

Questions about Photoelectric Conversion Devices:

1. How does the avalanche multiplication at the p-n junction enhance the conversion efficiency? 2. What are the potential commercial applications of this technology beyond solar panels and image sensors?


Original Abstract Submitted

A photoelectric conversion device includes a photoelectric conversion unit including a first semiconductor region, a second semiconductor region, and a third semiconductor region forming a p-n junction with the second semiconductor region, and a control circuit for switching a voltage of a reverse bias voltage applied between the first and the second semiconductor regions between first and second voltages. The photoelectric conversion device performs a period in which the reverse bias voltage is set to the first voltage to accumulate signal charge in the third semiconductor region, and a period in which the reverse bias voltage is set to the second voltage to enable transfer of signal charge to the first semiconductor region, and avalanche multiplication at the p-n junction between the first and second semiconductor regions. The control circuit switches between the first voltage and the second voltage by changing the reverse bias voltage to a rectangular shape.