18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kuo-Cheng Ching of Hsinchu County (TW)

Shi-Ning Ju of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18444356 titled 'SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS

The semiconductor device described in the patent application consists of first and second semiconductive fins, a first dielectric layer, a first gate structure, a spacer layer, and an oxide material. The first dielectric layer is positioned laterally between the first and second semiconductive fins and has a U-shaped profile when viewed from a cross-section perpendicular to the lengthwise direction of the first semiconductive fin. The first gate structure spans across the first and second semiconductive fins and the first dielectric layer. The spacer layer is located beneath the first dielectric layer and surrounds the lower portions of the first dielectric layer, the first semiconductive fin, and the second semiconductive fin. The oxide material is embedded within the first dielectric layer, with its top surface elevated above the top surface of the spacer layer.

• Key Features and Innovation:

  - Utilization of U-shaped profile dielectric layer for enhanced performance.
  - Integration of oxide material within the dielectric layer for improved functionality.
  - Spacer layer surrounding lower portions of components for increased stability.

• Potential Applications:

  - Advanced semiconductor devices for electronics industry.
  - High-performance computing applications.
  - Next-generation integrated circuits.

• Problems Solved:

  - Enhanced performance and stability of semiconductor devices.
  - Improved functionality and efficiency in electronic applications.

• Benefits:

  - Increased performance capabilities.
  - Enhanced reliability and durability.
  - Improved overall efficiency in electronic systems.

• Commercial Applications:

  - Potential use in smartphones, computers, and other electronic devices.
  - Market implications in the semiconductor industry for cutting-edge technology.

• Prior Art:

  - Researchers and developers in the field of semiconductor technology.
  - Patent databases and academic journals for related innovations.

• Frequently Updated Research:

  - Ongoing advancements in semiconductor technology.
  - Latest developments in dielectric materials and oxide integration.

Questions about semiconductor device technology:

1. How does the U-shaped profile of the dielectric layer contribute to the performance of the semiconductor device? 2. What are the potential implications of integrating oxide material within the dielectric layer for future electronic applications?

Original Abstract Submitted

A semiconductor device includes first and second semiconductive fins, a first dielectric layer, a first gate structure, a spacer layer, and an oxide material. The first dielectric layer is laterally between the first and second semiconductive fins. From a cross-sectional view taken along a direction perpendicular to a lengthwise direction of the first semiconductive fin, the first dielectric layer has a U-shaped profile. The first gate structure extends across the first and second semiconductive fins and the first dielectric layer. The spacer layer underlies the first dielectric layer and further extends to laterally surround a lower portion of the first dielectric layer, a lower portion of the first semiconductive fin, and a lower portion of the second semiconductive fin. The oxide material is nested in the first dielectric layer. A top surface of the oxide material is at an elevation higher than a top surface of the spacer layer.