18443997. MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about 3D Memory Arrays
- 1.13 Original Abstract Submitted
MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18443997 titled 'MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a test structure for 3D memory arrays, including various components like word lines, memory film, oxide semiconductor layer, and a conductive line for testing purposes.
- The memory array consists of multiple word lines and a memory film.
- An oxide semiconductor layer is present along with a test structure for testing the memory array.
- The test structure includes a conductive line that connects the word lines for testing purposes.
Key Features and Innovation
- Memory array structure for 3D memory arrays.
- Test structure for efficient testing of memory arrays.
- Integration of various components like word lines, memory film, and oxide semiconductor layer.
Potential Applications
The technology can be used in various memory devices, such as solid-state drives, smartphones, and computers.
Problems Solved
- Efficient testing of 3D memory arrays.
- Improved reliability and performance of memory devices.
Benefits
- Enhanced testing capabilities.
- Increased reliability of memory devices.
- Improved performance of memory arrays.
Commercial Applications
The technology can be applied in the manufacturing of memory devices for consumer electronics, data storage systems, and industrial applications.
Prior Art
Further research can be conducted in the field of 3D memory arrays and test structures to explore existing technologies and innovations.
Frequently Updated Research
Ongoing research in semiconductor technology and memory devices may provide new insights into improving the efficiency and performance of memory arrays.
Questions about 3D Memory Arrays
What are the potential commercial applications of 3D memory arrays?
3D memory arrays have various commercial applications, including in consumer electronics, data storage systems, and industrial equipment. These memory arrays offer high storage capacity and fast data access, making them suitable for a wide range of applications.
How does the test structure in the patent application improve the efficiency of memory array testing?
The test structure in the patent application allows for efficient testing of memory arrays by providing a conductive line that connects the word lines. This enables easy and accurate testing of the memory array components, ensuring reliable performance in memory devices.
Original Abstract Submitted
A test structure for 3D memory arrays and methods of forming the same are disclosed. In an embodiment, a memory array includes a first word line over a semiconductor substrate and extending in a first direction; a second word line over the first word line and extending in the first direction; a memory film contacting the first word line and the second word line; an oxide semiconductor (OS) layer contacting a first source line and a first bit line, the memory film being between the OS layer and each of the first word line and the second word line; and a test structure over the first word line and the second word line, the test structure including a first conductive line electrically coupling the first word line to the second word line, the first conductive line extending in the first direction.
