18443917. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yu-Lien Huang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18443917 titled 'SEMICONDUCTOR DEVICE

The abstract of the patent application describes a device with a channel layer, gate structure, source/drain epitaxial structure, and gate via. The gate structure spans the channel layer and consists of a gate dielectric layer and gate electrode. The source/drain epitaxial structure is next to the gate structure and connected to the channel layer. The gate via is located beneath the gate structure and in contact with the gate electrode.

• The device features a channel layer for electronic conduction.
• A gate structure, including a gate dielectric layer and gate electrode, controls the flow of current.
• The source/drain epitaxial structure is positioned adjacent to the gate structure for electrical connection.
• A gate via under the gate structure ensures proper contact with the gate electrode.

Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing

Problems Solved: - Efficient current control - Enhanced electrical connectivity - Improved device performance

Benefits: - Increased device efficiency - Enhanced electrical conductivity - Improved overall performance

Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does this device improve current control compared to traditional designs? 2. What are the potential implications of using this technology in integrated circuits?

Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance the performance of semiconductor devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.

Original Abstract Submitted

A device includes a channel layer, a gate structure, a source/drain epitaxial structure, and a gate via. The gate structure is across the channel layer. The gate structure includes a gate dielectric layer and a gate electrode over the gate dielectric layer. The source/drain epitaxial structure is adjacent the gate structure and is electrically connected to the channel layer. The gate via is under the gate structure and is in contact with the gate electrode.