18443362. Common source transistor apparatus simplified abstract (Realtek Semiconductor Corp.)
Contents
Common source transistor apparatus
Organization Name
Inventor(s)
CHIEH-PIN Chang of Hsinchu (TW)
CHUN-CHIEN Tsai of Hsinchu (TW)
Common source transistor apparatus - A simplified explanation of the abstract
This abstract first appeared for US patent application 18443362 titled 'Common source transistor apparatus
The present disclosure reveals a common source transistor apparatus, including diffusion areas, poly-silicon gates, and a source/bulk ring. The diffusion area consists of source/bulk areas and drain areas, with poly-silicon gates spanning between them. The gates have low-voltage, first high-voltage, and second high-voltage parts. The source/bulk ring surrounds the diffusion and gates, connected to the source/bulk area.
- Diffusion areas, poly-silicon gates, and source/bulk ring in common source transistor unit
- Gates include low-voltage, first high-voltage, and second high-voltage parts
- Source/bulk ring surrounds diffusion and gates, connected to source/bulk area
- Isolation ring and substrate ring surrounding the common source transistor unit
- Enhanced transistor design for improved performance and efficiency
Potential Applications: - Integrated circuits - Semiconductor devices - Power electronics
Problems Solved: - Improved transistor performance - Enhanced efficiency in electronic devices
Benefits: - Higher performance levels - Increased efficiency - Enhanced reliability
Commercial Applications: Title: Advanced Transistor Technology for Enhanced Electronic Devices This technology can be applied in various industries such as consumer electronics, automotive, telecommunications, and more. It can improve the performance and efficiency of electronic devices, leading to better user experience and cost-effectiveness.
Questions about Common Source Transistor Technology:
1. How does the common source transistor apparatus improve transistor performance? The common source transistor apparatus enhances transistor performance by optimizing the design of diffusion areas, poly-silicon gates, and the source/bulk ring, leading to improved efficiency and reliability.
2. What are the potential applications of this advanced transistor technology? The potential applications of this technology include integrated circuits, semiconductor devices, and power electronics, where it can significantly enhance performance and efficiency.
Original Abstract Submitted
The present disclosure discloses a common source transistor apparatus. The common source transistor unit includes a diffusion area, poly-silicon gates and a source/bulk ring. The diffusion area includes source/bulk areas and drain areas. Each of the poly-silicon gates traverses the diffusion areas between one of the source/bulk areas and one of the drain areas and includes a low-voltage gate part, a first high-voltage gate part and a second high-voltage gate part. The low-voltage gate part includes 2N low-voltage poly-silicon gates. Each of the first and the second high-voltage gate parts is disposed at a side of the low-voltage gate part having one of the source/bulk areas disposed therebetween and includes N+1 high-voltage poly-silicon gates. The source/bulk ring surrounds the diffusion and the poly-silicon gates and is coupled to the source/bulk area. An isolation ring surrounds the common source transistor unit. A substrate ring surrounds the isolation ring.
