18443297. SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Young Gwang Yoon of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18443297 titled 'SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract consists of two stacked structures, each containing a lower dielectric layer, a horizontal gate structure, and an upper dielectric layer. Additionally, there are channel layers, electrode layers, and upper electrode layers in the device.
- The device includes two stacked structures with different layers for improved functionality.
- Channel layers are present on both sides of the stacked structures.
- Lower electrode layer connects the channel layers between the stacked structures.
- Upper electrode layers are coupled to the upper ends of the channel layers.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring precise control of electrical currents.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in modern electronics.
Benefits: - Improved performance and functionality in electronic devices. - Enhanced control over electrical currents for better efficiency.
Commercial Applications: - This technology could be utilized in the manufacturing of advanced electronic devices such as smartphones, computers, and other consumer electronics.
Prior Art: - Further research is needed to determine if similar semiconductor devices have been patented or developed.
Frequently Updated Research: - Stay updated on advancements in semiconductor technology to enhance the performance of this device.
Questions about Semiconductor Device: 1. How does the design of this semiconductor device differ from traditional structures? 2. What specific advantages does the use of stacked structures provide in this device?
Original Abstract Submitted
A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second stacked structure including a second lower dielectric layer, a second horizontal gate structure, and a second upper dielectric layer stacked vertically, and having a first side facing a first side of the first stacked structure; a first channel layer formed on the first side of the first stacked structure; a second channel layer formed on the first side of the second stacked structure; a lower electrode layer commonly coupled to lower ends of the first and second channel layers between the first and second stacked structures; a first upper electrode layer coupled to an upper end of the first channel layer; and a second upper electrode layer coupled to an upper end of the second channel layer.
