18443013. MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)

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MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE

Organization Name

Micron Technology, Inc.

Inventor(s)

David H. Wells of Boise ID (US)

Matthew J. King of Boise ID (US)

Indra V. Chary of Boise ID (US)

Yoshiaki Fukuzumi of Yokohama (JP)

Lifang Xu of Boise ID (US)

Paolo Tessariol of Arcore (MB) (IT)

Shuangqiang Luo of Boise ID (US)

MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18443013 titled 'MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE

Simplified Explanation

The patent application describes methods, systems, and devices for forming merged cavities for conductors in a memory die. Cavities are formed in a stack of material layers, and conductors are created by merging some of these cavities.

  • Conductors are formed by merging cavities in a memory die.
  • Cavities are sized according to the smallest feature in the array.
  • Conductors are created by merging two or more cavities using a material removal operation.
  • This merging process allows for conductors with larger cross-sections compared to other features.

Key Features and Innovation

  • Formation of merged cavities for conductors in a memory die.
  • Sizing cavities based on the smallest feature in the array.
  • Merging cavities to create conductors with larger cross-sections.
  • Utilizing material removal operations for merging cavities.

Potential Applications

This technology can be applied in the manufacturing of memory dies, specifically in the formation of conductors within the die.

Problems Solved

This technology addresses the challenge of forming conductors with larger cross-sections in a memory die by merging cavities in a stack of material layers.

Benefits

  • Allows for the creation of conductors with larger cross-sections.
  • Enhances the efficiency of forming conductors in a memory die.
  • Provides a method for optimizing the size of cavities based on the smallest feature.

Commercial Applications

  • Title: Advanced Conductor Formation Technology for Memory Dies
  • This technology can be utilized in the semiconductor industry for memory die manufacturing.
  • It can improve the performance and reliability of memory devices.
  • Market implications include increased efficiency in memory die production processes.

Prior Art

Readers can explore prior patents related to conductor formation in memory dies to understand the evolution of this technology.

Frequently Updated Research

Stay updated on advancements in memory die manufacturing processes and conductor formation techniques to enhance the application of this technology.

Questions about Merged Cavities for Conductor Formation

1. How does merging cavities improve the formation of conductors in a memory die? 2. What are the key considerations when sizing cavities based on the smallest feature in the array?


Original Abstract Submitted

Methods, systems, and devices for merged cavities for conductor formation in a memory die are described. An array of cavities may be formed through a stack of material layers of a memory die, and conductors may be formed at least in part by merging some of the cavities of the array. Such cavities may be sized in accordance with a relatively smallest feature that implements a subset of such cavities, and a smallest associated feature may be formed using a first subset of the array of cavities. Conductors may be formed at least in part by merging two or more cavities of a second subset of the array of cavities using a material removal operation to remove portions of the stack of material layers. Such merging may support conductors being formed with a cross-section that is greater than a cross-section of other features formed using such cavities that are not merged.