18442748. SEMICONDUCTOR LIGHT-RECEIVING DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)

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SEMICONDUCTOR LIGHT-RECEIVING DEVICE

Organization Name

Sumitomo Electric Industries, Ltd.

Inventor(s)

Takuya Okimoto of Osaka-shi (JP)

SEMICONDUCTOR LIGHT-RECEIVING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18442748 titled 'SEMICONDUCTOR LIGHT-RECEIVING DEVICE

The semiconductor light-receiving device described in the abstract consists of an input optical waveguide, a tapering optical waveguide, and a light detection unit. The input optical waveguide has a first core and a first cladding layer, while the tapering optical waveguide has a second core and a second cladding layer. The light detection unit includes a light-absorbing layer, a first III-V compound semiconductor layer of a first conductivity type, and a second III-V compound semiconductor layer of the first conductivity type. The second III-V compound semiconductor layer has a higher dopant concentration than the first III-V compound semiconductor layer. The second core has a greater thickness than the light-absorbing layer.

  • The device features an input optical waveguide with a first core and cladding layer, and a tapering optical waveguide with a second core and cladding layer.
  • The light detection unit includes a light-absorbing layer, a first III-V compound semiconductor layer, and a second III-V compound semiconductor layer with higher dopant concentration.
  • The second core is thicker than the light-absorbing layer, providing efficient light detection.

Potential Applications: - Optical communication systems - Photodetectors - Optical sensors

Problems Solved: - Enhanced light detection efficiency - Improved signal-to-noise ratio in optical devices

Benefits: - Higher sensitivity in light detection - Increased performance of optical systems

Commercial Applications: Title: Advanced Light-Receiving Device for Optical Communication Systems This technology can be utilized in telecommunications, data transmission, and optical sensing industries to improve the efficiency and performance of light-receiving devices.

Questions about the technology: 1. How does the higher dopant concentration in the second III-V compound semiconductor layer contribute to improved light detection efficiency? 2. What are the specific advantages of using a tapering optical waveguide in this semiconductor light-receiving device?


Original Abstract Submitted

The semiconductor light-receiving device includes an input optical waveguide, a tapering optical waveguide, and a light detection unit. The input optical waveguide includes a first core and a first cladding layer, the tapering optical waveguide includes a second core and a second cladding layer. The light detection unit includes a light-absorbing layer, a first III-V compound semiconductor layer of a first conductivity type, and a second III-V compound semiconductor layer of the first conductivity type. The second III-V compound semiconductor layer has a dopant concentration higher than a dopant concentration of the first III-V compound semiconductor layer. The second core has a first thickness. The light-absorbing layer has a second thickness. The second thickness is smaller than the first thickness.

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