18442104. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoshinori Fukuda of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18442104 titled 'SEMICONDUCTOR DEVICE
The present disclosure introduces a semiconductor device with unique features.
- The semiconductor device comprises a main transistor, a monitoring transistor, and a pair of separation portions located in a gate space between adjacent trench gate structures.
- A body region is divided into a monitoring body region between the separation portions and a main body region on the opposite side of the monitoring body region.
- The trench gate structures consist of a first gate structure next to the monitoring body region and the main body region in a specific direction, and a second gate structure adjacent to the separation portions.
- The first gate structure is a multi-electrode structure, while the second gate structure is a single-electrode structure.
Potential Applications: - Power electronics - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Improved performance and efficiency in semiconductor devices - Enhanced monitoring capabilities
Benefits: - Higher reliability - Better control over device operation - Increased functionality
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Performance This technology can be utilized in various industries such as consumer electronics, automotive, and renewable energy sectors. It can lead to more efficient and reliable electronic devices, contributing to advancements in technology.
Questions about the technology: 1. How does the unique structure of the semiconductor device contribute to its performance? The specific design of the semiconductor device allows for improved monitoring and control, leading to enhanced overall performance.
2. What sets this semiconductor device apart from traditional designs? The inclusion of a monitoring transistor and separation portions in the gate space is a novel approach that offers increased functionality and reliability.
Original Abstract Submitted
The present disclosure provides a semiconductor device. The semiconductor device includes a main transistor, a monitoring transistor and a pair of separation portions selectively formed in a gate space sandwiched between adjacent trench gate structures. A body region is separated into a monitoring body region sandwiched between the pair of separation portions and a main body region at an opposite side of the monitoring body region across the pair of separation portions. The trench gate structures include: a first gate structure adjacent to the monitoring body region and the main body region along a first direction; and a second gate structure adjacent to the pair of separation portions. The first gate structure is a multi-electrode structure and the second gate structure is a single-electrode structure.
