18441645. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18441645 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of gate stack structures, insulating films, separation insulating films, contact holes, contact electrodes, and second separation insulating films.
- The gate stack structures are made up of stacked gate lines with insulating films in between.
- Alternately stacked first separation insulating films define contact holes where contact electrodes are placed to connect with the gate stack structures.
- Second separation insulating films on the uppermost gate line separate the contact electrodes from the gate stack structures.
- This design allows for efficient and reliable operation of the semiconductor memory device.
Potential Applications: - This technology can be applied in various semiconductor memory devices such as DRAM, SRAM, and flash memory. - It can also be used in other integrated circuits where precise contact and separation between components are crucial.
Problems Solved: - Provides a solution for ensuring proper contact and insulation in semiconductor memory devices. - Enhances the performance and reliability of the memory device by preventing interference between components.
Benefits: - Improved functionality and efficiency of semiconductor memory devices. - Enhanced durability and longevity of the memory device. - Enables higher data storage capacity and faster data processing speeds.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and servers. The market implications include increased demand for faster and more reliable memory solutions in various industries.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor memory devices, specifically focusing on innovations in gate stack structures and insulation techniques.
Frequently Updated Research: Researchers in the field of semiconductor technology are constantly working on improving memory devices' performance and efficiency. Stay updated on the latest advancements in gate stack structures and insulation materials to enhance semiconductor memory devices' capabilities.
Questions about Semiconductor Memory Devices: 1. How does this technology compare to traditional memory device designs? This technology offers improved contact and insulation features compared to traditional designs, enhancing overall performance and reliability.
2. What are the potential challenges in implementing this technology on a large scale? Implementing this technology on a large scale may require advanced manufacturing processes and precise control over material properties to ensure consistent performance across all devices.
Original Abstract Submitted
A semiconductor memory device includes a substrate, a plurality of gate stack structures on the substrate that include a plurality of gate lines stacked and a plurality of insulating films between the plurality of gate lines, a plurality of first separation insulating films that are alternately stacked with the plurality of gate lines, where the plurality of gate stack structures and the plurality of first separation insulating films define a contact hole, a contact electrode that is in the contact hole and contacts the plurality of gate stack structures, and one or more second separation insulating film that is on an uppermost gate line of one or more of the plurality of gate stack structures and separates the contact electrode from the uppermost gate line.
