18441520. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyeonjin Shin of Suwon-si (KR)
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18441520 titled 'FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
The field effect transistor described in the patent application includes a source electrode, a drain electrode, channels, gate insulating layers, and a gate electrode on a substrate.
- The channels have a hollow closed cross-sectional structure when viewed in a specific direction.
- The gate insulating layers are located within the channels.
- The gate electrode is insulated from the source and drain electrodes by the gate insulating layers.
Potential Applications:
- This technology could be used in electronic devices such as smartphones, tablets, and computers.
- It may also find applications in sensors, amplifiers, and other electronic systems.
Problems Solved:
- This innovation addresses the need for more efficient and compact field effect transistors.
- It provides a solution for improving the performance of electronic devices.
Benefits:
- Improved efficiency and performance in electronic devices.
- Enhanced miniaturization and integration of components.
- Potential cost savings in manufacturing processes.
Commercial Applications:
- The technology could be valuable for semiconductor manufacturers looking to enhance their product offerings.
- It may have implications for the consumer electronics industry, leading to more advanced and compact devices.
Prior Art:
- Further research is needed to determine specific prior art related to this technology.
Frequently Updated Research:
- Stay updated on advancements in semiconductor technology and field effect transistors for potential improvements or new applications.
Questions about Field Effect Transistors: 1. How does this innovation compare to traditional field effect transistors in terms of performance and efficiency? 2. Are there any specific industries or sectors that could benefit the most from this technology?
Original Abstract Submitted
Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
